Memory Design Engineer Intern, Richardson TX

Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in memory and storage solutions that help turn information into intelligence.

Job Description

The High Bandwidth Memory (HBM) Design team builds memory solutions that power Artificial Intelligence (AI), high-performance computing, graphics, and data center applications. The team works with Design, Verification, Physical Design, Product Engineering, and CAD groups to deliver next-generation memory technologies.

As an HBM Design Engineer Intern, you will work alongside experienced engineers on the design, development, and validation of advanced HBM products. The internship offers hands-on experience with semiconductor design methodologies, industry-standard EDA tools, and AI-assisted engineering workflows on real memory design projects in a collaborative global setting.

Responsibilities

• Assist with HBM memory and logic design work, including RTL development, circuit implementation, simulation, verification, and functional analysis.
• Develop and use scripting, automation, and AI-assisted workflows to improve design productivity, debug efficiency, and design-flow quality.
• Perform timing, power, and functional analysis of HBM subsystems, and support design reviews, technical investigations, and root-cause analysis using AI-enabled engineering techniques where appropriate.
• Collaborate with Design Verification, Physical Design, CAD, and Product Engineering teams to support project execution and product development.
• Document technical work, experimental results, build methodologies, and AI-assisted insights to support collaboration and ongoing improvement.

Micron offers medical, dental, and vision plans in all locations, income protection benefits, paid family leave, paid time off, and paid holidays. Micron is an equal opportunity and affirmative action employer.