HBM Design Engineer Intern

Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in memory and storage solutions that accelerate the transformation of information into intelligence.

The High Bandwidth Memory (HBM) Design team develops memory solutions that power artificial intelligence, high-performance computing, graphics, and data-center applications. Engineers on the team work across global groups to deliver next-generation memory architectures, design methodologies, and semiconductor solutions.

As an HBM Design Engineer Intern, you will work alongside experienced memory engineers on the design, development, and validation of HBM products. The role offers hands-on experience with digital design, circuit design, design verification, simulation, and semiconductor development flows, while collaborating with Design, Verification, Physical Design, Product Engineering, and CAD teams.

Responsibilities

• Assist with the design, simulation, analysis, and verification of HBM memory and logic circuits using industry-standard EDA tools.
• Support RTL development, circuit implementation, timing analysis, power analysis, and functional verification.
• Develop scripts, automation, and AI-assisted workflows to improve design productivity, debug efficiency, and design-flow quality.
• Take part in design reviews, technical discussions, and debugging, using AI-enabled analysis to speed up root-cause identification and engineering decisions.
• Document technical work, experimental results, build methodologies, and AI-assisted insights to support collaboration and continuous improvement.

Micron is an equal opportunity and affirmative action employer. All qualified applicants are considered without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity, or any other legally protected factor.