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Design Engineer Intern Folsom CA

MicronFolsom, CAPosted 2 hours ago

Pay
$81k – $116k
per year
Type
Internship
Full time
Where
Folsom, CA
Who
Bachelor's or Master's
Students
Apply by
Nov 19, 2026
Date from the posting

Our Vision

Micron Technology is a world leader in memory and storage solutions that turn information into intelligence, helping the world learn, communicate and advance faster than ever.

Department Overview

The Pathfinding Design team explores and develops new circuit architectures and design concepts for future generations of Micron memory products. Combining digital, analog and mixed-signal design techniques with simulation, modeling and performance analysis, the team drives early-stage technology development and helps shape the future of memory.

Position Overview

As a Design Engineer on the Pathfinding Design Team, you will support the design, modeling and analysis of digital, analog and mixed-signal circuits used in next-generation memory technologies. You will work alongside experienced engineers to evaluate design concepts, build simulation models, weigh performance trade-offs and contribute to circuit solutions that improve memory performance, power efficiency and scalability.

Responsibilities

  • Develop simulation models to evaluate the performance of digital, analog and mixed-signal circuit designs.
  • Run simulations, analyze results and create performance scorecards to compare design alternatives and architectural trade-offs.
  • Design and evaluate new circuit concepts that improve performance, power efficiency and functionality.
  • Support mixed-signal circuit design, modeling, characterization and validation activities.
  • Work with multi-functional engineering teams to document results, communicate findings and support technology development initiatives.

Skills mentioned

  • Digital Design
  • Analog Design
  • Semiconductor
  • DRAM
  • Mixed-Signal Design
  • Circuit Simulation

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